參數(shù)資料
型號(hào): 2SK3134L-E
元件分類: JFETs
英文描述: 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LDPAK-3
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 94K
代理商: 2SK3134L-E
Data Sheet D14753EJ1V0DS
3
2SK3456
TYPICAL CHARACTERISTICS (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0
20
30
40
10
20
30
5
15
25
35
VGS = 20 V
Pulsed
10 V
FORWARD TRANSFER CHARACTERISTICS
VGS
- Gate to Source Voltage - V
ID
-
Drain
Current
-
A
0.001
0.1
0.01
1
10
100
010
515
50C
25C
125C
75C
TA = 150C
Pulsed
VDS = 10 V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
V
GS(off)
-
Gate
to
Source
Cut-off
Voltage
-
V
VDS = 10 V
ID = 1 mA
50
0
150
50
0
1.0
100
2.0
3.0
4.0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|y
fs
|-
Forward
Transfer
Admittance
-
S
ID - Drain Current - A
1
0.1
0.01
10
100
10
100
0.1
25C
75C
125C
TA =
50C
150C
VDS = 10 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VGS - Gate to Source Voltage - V
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
0
5
0.4
10
15
20
1.2
1.4
0.8
0.2
1.0
0.6
Pulsed
6.0 A
2.4 A
ID = 12 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
1
0.1
1.5
0.9
0.3
0
1.2
0.6
10
100
Pulsed
VGS = 10 V
20 V
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