參數(shù)資料
型號(hào): 2SK3108
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 68K
代理商: 2SK3108
Data Sheet D13331EJ1V0DS00
3
2SK3108
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
-
Drain to Source Voltage - V
I
D
30
25
20
15
10
5
0
Pulsed
0 2 4 6 8 10 1214 16 18 20 22 24 2628 30
V
GS
= 10 V
V
GS
= 30 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
-
Gate to Source Voltage - V
I
D
100
10
1
0.1
0.01
0.001
Pulsed
0
V
DS
= 10 V
13 1415 16
1 2 3 4 5 6 7 8 9 10 1112
T
=125C
75C
25C
-25C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
= 10 V
I
D
= 1 mA
50
50
100
0
150
5.0
4.5
4.0
3.5
3.0
2.5
2.0
25
25
75
125
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
|
0.1
10
1
0.1
0.01
1
100
0.01
10
V
DS
=10 V
Pulsed
T
ch
= -25C
T
ch
= 25C
T
ch
= 75C
T
ch
= 125C
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.0
V
GS
- Gate to Source Voltage - V
R
D
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10 12
14
16
18
20
I
D
=
8.0
A
4.0 A
1.6 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
1
10
100
Pulsed
1.0
0.8
0.6
0.4
0.2
0
0.1
V
GS
= 10 V
V
GS
= 30 V
#
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