- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370112 > 2SK3108 (NEC Corp.) Switching N-channel power MOS FET industrial use PDF資料下載
參數(shù)資料
| 型號： | 2SK3108 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 68K |
| 代理商： | 2SK3108 |
Data Sheet D13331EJ1V0DS00
2
2SK3108
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain Leakage Current
I
DSS
V
DS
= 200 V, V
GS
= 0 V
100
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
30 V, V
DS
= 0 V
±
10
μ
A
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
2.5
4.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 4.0 A
1.5
S
Drain to Source On-state Resistance R
DS(on)
V
GS
= 10 V, I
D
= 4.0 A
0.32
0.4
Input Capacitance
C
iss
V
DS
= 10 V
400
pF
Output Capacitance
C
oss
V
GS
= 0 V
110
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
55
pF
Turn-on Delay Time
t
d(on)
V
DD
= 100 V, I
D
= 4.0 A
12
ns
Rise Time
t
r
V
GS(on)
= 10 V
25
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
40
ns
Fall Time
t
f
20
ns
Total Gate Charge
Q
G
V
DD
= 160 V
18
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
3.5
nC
Gate to Drain Charge
Q
GD
I
D
= 8.0 A
10
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 8.0 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 8.0 A, V
GS
= 0 V
250
ns
Reverse Recovery Charge
Q
rr
di/dt = 50 A/
μ
s
1.0
μ
C
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0
V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
μ
s
Duty Cycle
≤
1 %
τ
V
GS
Wave Form
D
Wave Form
V
GS
I
D
10
%
0
0
90
%
90
%
90
%
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10
%
10
%
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3109 | Switching N-channel power MOS FET industrial use |
| 2SK3109-S | Switching N-channel power MOS FET industrial use |
| 2SK3109-ZJ | Switching N-channel power MOS FET industrial use |
| 2SK3119 | Ultrahigh-Speed Switching Applications |
| 2SK3120 | Ultrahigh-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3108-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 8A 400m@10V IsolatedTO220 Bulk |
| 2SK3109 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3109-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3109-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK311 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。