參數(shù)資料
型號(hào): 2SK3105
廠(chǎng)商: NEC Corp.
英文描述: N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: N溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān)
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 62K
代理商: 2SK3105
Data Sheet D13293EJ1V0DS00
3
2SK3105
TYPICAL CHARACTERISTICS (T
A
= 25°C)
30
T
A
- Ambient Temperature -
C
150
60
90
20
60
80
40
0
100
120
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
FORWARD BIAS SAFE OPERATING AREA
10
100
I
D
1
V
DS
- Drain to Source Voltage - V
100
10
1
0.1
0.1
0.01
5s
100
ms
10
ms
PW
=
1
ms
R
=
(@V
GS
10
V
I
D
(pulse)
I
D
(
DC
)
Single Pulse
Mounted on FR-4 Board of
50mm x 50mm x 1.6mm
0.01
0.001
0.0001
0.00001
1
0
2
3
4
5
10
1
0.1
V
GS
- Gate to Sorce Voltage - V
25C
25C
T
A
= 125C
75C
V
DS
=
10 V
TRANSFER CHARACTERISTICS
I
D
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature - C
V
G
V
DS
= 10 V
I
D
= 1 mA
50
50
100
0
150
2.0
1.6
1.8
1.4
1.2
1.0
1
10
0.1
V
DS
= 10V
I
D
- Drain Current - A
|
f
|
1
10
0.1
0.01
0.01
100
25
C
T
A
=
25
C
125
C
75
C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
0.1
0.01
10
I
D
- Drain Current - A
R
D
100
50
150
T
A
= 125
C
75
C
25
C
25
C
V
GS
= 4.0 V
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