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參數(shù)資料
| 型號： | 2SK3082 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應晶體管高速電源開關 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 2SK3082 |
2SK3082(L),2SK3082(S)
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
60
V
Gate to source voltage
±
20
V
Drain current
10
A
Drain peak current
Note1
40
A
Body-drain diode reverse drain current I
DR
Avalanche current
10
A
I
AP
E
AR
Pch
Note2
Note3
10
A
Avalanche energy
Note3
8.5
mJ
Channel dissipation
30
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
60
—
—
V
I
D
= 10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 5A, V
GS
= 10V
Note4
I
D
= 5A, V
GS
= 4V
Note4
I
D
= 5A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
±
20
—
—
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.5
—
2.5
V
Static drain to source on state
—
0.055
0.075
resistance
—
0.090
0.150
Forward transfer admittance
5
8
—
S
Input capacitance
—
350
—
pF
Output capacitance
Coss
—
190
—
pF
Reverse transfer capacitance
Crss
—
70
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
10
—
ns
I
D
= 5A, V
GS
= 10V
R
L
= 6
Rise time
—
55
—
ns
Turn-off delay time
—
60
—
ns
Fall time
—
70
—
ns
Body–drain diode forward voltage
—
0.9
—
V
I
F
= 10A, V
GS
= 0
I
= 10A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
50
—
ns
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3082L | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082S | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3105 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SK3107 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK3108 | Switching N-channel power MOS FET industrial use |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3082L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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