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參數(shù)資料
| 型號(hào)： | 2SK3076L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 2SK3076L |
2SK3076(L),2SK3076(S)
3
Main Characteristics
80
60
40
20
0
50
100
150
200
20
16
12
8
4
0
10 V
10
20
30
40
50
20
16
12
8
4
0
2
4
6
8
10
C
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
D
D
Typical Transfer Characteristics
V = 20 V
Pulse Test
0.1
0.3
1
3
10
30
100
100
30
10
3
1
0.3
0.1
0.03
0.01
DCOpeaion(Tc=25°C
Ta = 25 °C
100μs
PW=10ms(1sho)
Operation in
this area is
limited by R
DS(on)
6 V
4 V
5 V
75°C
–25°C
Ta = 25°C
V = 4 V
Pulse Test
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PDF描述 |
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| 2SK3076S | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076 | Silicon N Channel MOS FET High Speed Power Switching |
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| 2SK3081 | Silicon N Channel MOS FET High Speed Power Switching |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3076S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3077 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS |
| 2SK3077_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
| 2SK3077A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF/UHF Band Amplifier Applications |
| 2SK3078 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
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