參數(shù)資料
型號(hào): 2SK3076
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān)
文件頁(yè)數(shù): 1/9頁(yè)
文件大?。?/td> 51K
代理商: 2SK3076
2SK3076(L),2SK3076(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-656 (Z)
1st. Edition
Jun 1998
Features
Low on-resistance
High speed switching
Low drive current.
Built-in fast recovery diode (trr=120 ns)
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
相關(guān)PDF資料
PDF描述
2SK3080 Silicon N Channel MOS FET High Speed Power Switching
2SK3081 Silicon N Channel MOS FET High Speed Power Switching
2SK3082 Silicon N Channel MOS FET High Speed Power Switching
2SK3082L Silicon N Channel MOS FET High Speed Power Switching
2SK3082S Silicon N Channel MOS FET High Speed Power Switching
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3076L 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3076S 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3077 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS
2SK3077_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
2SK3077A 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF/UHF Band Amplifier Applications