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參數(shù)資料
| 型號： | 2SK3076 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 2SK3076 |
2SK3076(L),2SK3076(S)
4
10
8
6
4
2
0
4
8
12
16
20
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
0
0.1
0.2
0.5
1
2
5
10
500
100
200
20
10
50
2
5
1
0.5
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
Pulse Test
D
R
D
I = 2 A
10 A
5 A
Drain Current I (A)
0.5
2
10
50
1
5
20
2
0.1
0.5
0.2
1
15 V
S
R
D
I = 10 A
0.05
V = 10 V
V = 10 V
Pulse Test
2, 5 A
V = 20 V
Pulse Test
25 °C
Tc = –25 °C
75 °C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3080 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3081 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082L | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3082S | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3076L | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3077 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS |
| 2SK3077_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
| 2SK3077A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF/UHF Band Amplifier Applications |
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