參數(shù)資料
型號: 2SK3069
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 3/10頁
文件大小: 52K
代理商: 2SK3069
2SK3069
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
60
V
I
D
= 10 mA, V
GS
= 0
V
GS
=
±
20 V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note 1
I
D
= 40 A, V
GS
= 10 V
Note 1
I
D
= 40 A, V
GS
= 4 V
Note 1
I
D
= 40 A, V
DS
= 10 V
Note 1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
±
0.1
μ
A
μ
A
Zero gate voltege drain current
10
Gate to source cutoff voltage
1.0
2.5
V
Static drain to source on state
6.0
7.5
m
m
resistance
8.0
12
Forward transfer admittance
|y
fs
|
Ciss
50
80
S
Input capacitance
7100
pF
Output capacitance
Coss
1000
pF
Reverse transfer capacitance
Crss
280
pF
Total gate charge
Qg
125
nc
V
DD
= 25 V
V
GS
= 10 V
I
D
= 75 A
V
GS
= 10 V, I
D
= 40 A
R
L
= 0.75
Gate to source charge
Qgs
25
nc
Gate to drain charge
Qgd
25
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
60
ns
Rise time
300
ns
Turn-off delay time
520
ns
Fall time
330
ns
Body–drain diode forward voltage
1.05
V
I
F
= 75 A, V
GS
= 0
I
= 75 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse
recovery time
Note:
1. Pulse test
90
ns
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3069-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3070 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3070(L) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-262VAR
2SK3070(S) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-263VAR