參數(shù)資料
型號: 2SK3069
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 2/10頁
文件大?。?/td> 52K
代理商: 2SK3069
2SK3069
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note 2
60
V
Gate to source voltage
±
20
V
Drain current
75
A
Drain peak current
Note 1
300
A
Body-drain diode reverse drain current
75
A
Avalanche current
Note 3
50
A
Avalanche energy
Note 3
214
mJ
Channel dissipation
100
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1%
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
50
Tstg
–55 to +150
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3069-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3070 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3070(L) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-262VAR
2SK3070(S) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-263VAR