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參數(shù)資料
| 型號(hào)： | 2SK3062-Z-AZ |
| 元件分類： | JFETs |
| 英文描述： | 70 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-25Z, TO-220SMD, 3 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 207K |
| 代理商： | 2SK3062-Z-AZ |
1998,1999
MOS FIELD EFFECT TRANSISTOR
2SK3062
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
D13101EJ2V0DS00 (2nd edition)
Date Published
April 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3062 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
RDS(on)1 = 8.5 m
MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 12 m
MAX. (VGS = 4.0 V, ID = 35 A)
Low Ciss: Ciss = 5200 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
±20
V
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
+20,
10
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±70
A
Drain Current (Pulse)
Note1
ID(pulse)
±280
A
Total Power Dissipation (TC = 25°C)
PT
100
W
Total Power Dissipation (TA = 25°C)
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
35
A
Single Avalanche Energy
Note2
EAS
122.5
mJ
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3062
TO-220AB
2SK3062-S
TO-262
2SK3062-ZJ
TO-263
2SK3062-Z
TO-220SMD
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
Notes 1. PW
≤ 10
s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 30 V, RG = 25
, VGS = 20
→ 0 V
Notes TO-220SMD package is produced only in
Japan
5
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PDF描述 |
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| 2SK3069 | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3069 | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3070(S) | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3070(S) | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3070(L) | 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3062-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3064 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK306400L | 功能描述:MOSFET N-CH 30V .1A S-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3064G0L | 功能描述:MOSFET N-CH 30V .1A S-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3065 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:Silicon N-Channel MOSFET |
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