參數(shù)資料
型號(hào): 2SK303
廠商: Sanyo Electric Co.,Ltd.
英文描述: Low-Frequency General-Purpose Amplifier Applications N-Channel Junction Silicon FET(用于低頻通用放大器N溝道結(jié)型硅場(chǎng)效應(yīng)管)
中文描述: 低頻通用放大器應(yīng)用N溝道結(jié)硅場(chǎng)效應(yīng)管(用于低頻通用放大器?溝道結(jié)型硅場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 100K
代理商: 2SK303
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 1999. Specifications and information herein are subject to
change without notice.
2SK303
PS No.856–4/4
相關(guān)PDF資料
PDF描述
2SK304 Low-Frequency Amplifier Applications N-Channel Junction Silicon FET(用于低頻通用放大器N溝道結(jié)型硅場(chǎng)效應(yīng)管)
2SK3053 Switching N-channel power MOS FET industrial use
2SK3054 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
2SK3055 Switching N-channel power MOS FET industrial use
2SK3057 Switching N-channel power MOS FET industrial use
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK303_10 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS
2SK303_11 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS
2SK3030 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET
2SK3030(TENTATIVE) 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET
2SK303000L 功能描述:MOSFET N-CH 100V 8A UG-1 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件