參數(shù)資料
型號(hào): 2SK3057
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
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代理商: 2SK3057
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1998
MOS FIELD EFFECT TRANSISTOR
2SK3057
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D13096EJ1V0DS00 (1st edition)
March 1999 NS CP(K)
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching application.
FEATURES
Low on-state resistance
R
DS(on)1
= 17 m
MAX. (V
GS
= 10
V, I
D
= 23
A)
R
DS(on)2
= 27 m
MAX. (V
GS
= 4
V, I
D
= 23
A)
Low C
iss
: C
iss
= 2100
pF TYP.
Built-in gate protection diode
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS(AC)
±
20
V
Gate to Source Voltage
V
GSS(DC)
+20, –10
V
Drain Current (DC)
Drain Current (pulse)
Note1
I
D(DC)
±
45
±
150
A
I
D(pulse)
A
Total Power Dissipation (T
c
= 25°C)
P
T
30
W
Total Power Dissipation (T
a
= 25°C)
P
T
2.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
22.5
A
E
AS
50.6
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1 %
2.
Starting T
ch
= 25
°C, R
G
= 25
, V
GS
= 20
V
0
THERMAL RESISTANCE
Channel to Case
R
th(ch-c)
4.17
°C/W
Channel to Ambient
R
th(ch-a)
62.5
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3057
Isolated TO-220
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