- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370112 > 2SK303 (Sanyo Electric Co.,Ltd.) Low-Frequency General-Purpose Amplifier Applications N-Channel Junction Silicon FET(用于低頻通用放大器N溝道結(jié)型硅場(chǎng)效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK303 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Low-Frequency General-Purpose Amplifier Applications N-Channel Junction Silicon FET(用于低頻通用放大器N溝道結(jié)型硅場(chǎng)效應(yīng)管) |
| 中文描述： | 低頻通用放大器應(yīng)用N溝道結(jié)硅場(chǎng)效應(yīng)管（用于低頻通用放大器?溝道結(jié)型硅場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 100K |
| 代理商： | 2SK303 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
Low-Frequency
General-Purpose Amplifier Applications
Ordering number:EN856F
2SK303
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42099TH (KT)/5231MH/6027KI/3075MW/D282KI No.856–1/4
0.4
0.95 0.95
1.9
2.9
0
1
2
0
0.16
0 to 0.1
0
1
2
3
1
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2050A
[2SK303]
Features
· Ideal for potentiometers, analog switches, low
frequency amplifiers, constant current supplies, and
impedance conversion.
C
C
Electrical Characteristics
at Ta = 25C
1 : Source
2 : Drain
3 : Gate
SANYO : CP
* : The 2SK303 is classified by I
DSS
as follows (unit : mA).
Note Marking : V
I
DSS
rank : 2, 3, 4, 5
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
t
U
e
g
a
V
a
V
e
c
o
n
D
t
e
C
e
C
e
a
T
n
o
n
e
g
a
S
S
-
D
-
G
e
G
n
D
w
o
u
J
V
V
S
S
S
D
D
G
IG
ID
PD
j
g
T
0
0
0
0
0
0
0
3
3
1
2
0
5
5
V
V
e
g
–
A
A
W
m
m
m
t
o
P
m
e
m
e
n
o
p
s
D
e
p
e
p
r
w
2
1
1
T
+
o
5
5
–
5
2
6
0
3
2
0
4
5
0
1
5
0
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
–
m
p
x
a
m
n
D
c
o
S
V
e
G
a
V
f
C
d
w
r
F
C
t
p
n
s
v
e
R
-
D
-
G
-
G
-
Z
V
S
D
G
S
S
S
S
)
S
s
s
s
C
s
C
)
R
G
D
G
|
B
I
I
(
IG
VS
G
VS
D
VS
D
VS
D
VS
D
VS
D
VS
D
A
0
V
V
V
V
V
m
μ
2
0
0
0
0
0
0
0
–
1
1
1
1
1
1
1
=
=
=
=
=
=
=
–
=
0
3
V
A
n
m
V
m
p
p
t
t
e
C
e
C
e
g
a
n
D
k
a
e
e
L
g
e
V
,
I
,
,
,
V
0
–
0
1
a
e
g
r
n
a
T
a
a
p
n
a
T
c
o
S
*
V
S
1
G
D
V
G
V
G
V
G
,
0
A
=
=
=
=
=
=
=
=
μ
*
6
*
4
A
V
=
1
–
–
e
c
n
a
m
d
A
|
S
S
S
G
z
z
z
H
H
H
M
M
M
1
1
1
5
0
S
F
F
e
c
n
a
e
5
e
c
c
n
n
a
a
a
e
p
R
a
C
N
r
e
s
5
5
2
e
O
R
)
N
O
(
S
D
V
S
0
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK304 | Low-Frequency Amplifier Applications N-Channel Junction Silicon FET(用于低頻通用放大器N溝道結(jié)型硅場(chǎng)效應(yīng)管) |
| 2SK3053 | Switching N-channel power MOS FET industrial use |
| 2SK3054 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 2SK3055 | Switching N-channel power MOS FET industrial use |
| 2SK3057 | Switching N-channel power MOS FET industrial use |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK303_10 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS |
| 2SK303_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS |
| 2SK3030 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK3030(TENTATIVE) | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK303000L | 功能描述:MOSFET N-CH 100V 8A UG-1 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。