參數(shù)資料
型號(hào): 2SK3013
元件分類: JFETs
英文描述: 16 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ITO-3P, 3 PIN
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 340K
代理商: 2SK3013
Single
Avalanche
Current
-
Inductive
Load
0.1
1
10
100
2SK3013
0.1
1
10
100
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
V
DD
=
90V
V
GS
=
15V
0V
Rg
=
15
I AS
=
16A
E
AS
=
500mJ
E
AR
=
50mJ
Inductance
L
[mH]
SingleAvalanche
Current
IAS
[A]
相關(guān)PDF資料
PDF描述
2SK3017 8.5 A, 900 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3019TL 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK301P 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK0301S 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK0301P 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3017 功能描述:MOSFET N-CH 900V 8.5A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3017(F) 功能描述:MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3017_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
2SK3017_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC−DC Converter, Relay Drive and Motor Drive Applications
2SK3018 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR