參數(shù)資料
型號(hào): 2SK2929
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 52K
代理商: 2SK2929
2SK2929
6
Reverse Drain Current I (A)
R
Body–Drain Diode Reverse
Recovery Time
C
Drain to Source Voltage V (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nc)
D
D
G
G
Dynamic Input Characteristics
Drain Current I (A)
S
Switching Characteristics
0.1
0.3
1
3
10
30
100
1000
500
50
100
20
10
200
di / dt = 50 A / μs
V = 0, Ta = 25 °C
0
10
20
30
40
50
2000
5000
1000
100
200
500
10
20
50
V = 0
f = 1 MHz
Ciss
Coss
Crss
100
80
60
40
20
0
20
16
12
8
4
8
16
24
32
40
0
I = 25 A
V
GS
V
DS
V = 50 V
25 V
10 V
V = 50 V
25 V
10 V
1000
300
30
100
3
10
1
0.1
0.3
1
3
10
30
100
V = 10 V, V = 3 0 V
PW = 5 μs, duty < 1 %
tf
r
d(on)
t
d(off)
t
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參數(shù)描述
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