參數(shù)資料
型號(hào): 2SK2929
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 4/10頁(yè)
文件大小: 52K
代理商: 2SK2929
2SK2929
4
Main Characteristics
C
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
D
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
D
D
Typical Transfer Characteristics
80
60
40
20
0
50
100
150
200
200
100
50
10
20
5
1
2
0.5
0.2
0.1
0.3
1
3
10
30
100
Ta = 25 °C
100μ
1m
PW=10m 1ho)
DCOprton(T =25C
10μ
Operation in
this area is
limited by R
DS(on)
50
40
30
20
10
0
2
4
6
8
10
3.5 V
4 V
5 V
V = 3 V
6 V
4.5 V
10 V
20
16
12
8
4
0
1
2
3
4
5
Tc = 75°C
25°C
–25°C
V = 10 V
Pulse Test
Pulse Test
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