參數(shù)資料
型號: 2SK2929
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 2/10頁
文件大小: 52K
代理商: 2SK2929
2SK2929
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP
E
AR
Pch
Note2
60
V
Gate to source voltage
±
20
V
Drain current
25
A
Drain peak current
Note1
100
A
Body-drain diode reverse drain current
25
A
Avalanche current
Note3
20
A
Avalanche energy
Note3
34
mJ
Channel dissipation
50
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Note:
1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
50
Tstg
–55 to +150
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2929-E 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220AB Box
2SK2930-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 35A 3-Pin(3+Tab) TO-220AB Box
2SK2931-E 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-220AB Box
2SK2933-E 制造商:Renesas Electronics 功能描述:60V 15A TO3 Cut Tape
2SK2934(E) 制造商:Renesas Electronics Corporation 功能描述: