參數(shù)資料
型號: 2SK2837
元件分類: JFETs
英文描述: 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-16C1B, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 425K
代理商: 2SK2837
2SK2837
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 10 A
0.21
0.27
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 10 A
10
17
S
Input capacitance
Ciss
3720
Reverse transfer capacitance
Crss
340
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1165
pF
Rise time
tr
30
Turnon time
ton
70
Fall time
tf
50
Switching time
Turnoff time
toff
290
ns
Total gate charge (gatesource
plus gatedrain)
Qg
80
Gatesource charge
Qgs
48
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 6 A
32
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
20
A
Pulse drain reverse current
(Note 1)
IDRP
80
A
Forward voltage (diode)
VDSF
IDR = 20 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
540
ns
Reverse recovery charge
Qrr
IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / μs
5.4
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K2837
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
相關PDF資料
PDF描述
2SK2838(2-10S1B) 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2839 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2841 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2841 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2842 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
2SK2837(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 20A 3PIN 2-16C1C - Rail/Tube 制造商:Toshiba 功能描述:Nch 500V 20A 0.27@10V TO3P(N) Bulk
2SK2837(Q,T) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3PN T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 20A TO-3PN
2SK2838(Q) 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220
2SK2838-SM(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SK2841 功能描述:MOSFET N-Ch 400V 10A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube