參數(shù)資料
型號: 2SK2841
元件分類: JFETs
英文描述: 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, 2-10P1B, SC-46, 3 PIN
文件頁數(shù): 1/6頁
文件大小: 417K
代理商: 2SK2841
2SK2841
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2841
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.4 (typ.)
High forward transfer admittance
: |Yfs| = 8.0 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 400 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
400
V
Draingate voltage (RGS = 20 k)
VDGR
400
V
Gatesource voltage
VGSS
±30
V
DC (Note 1)
ID
10
A
Drain current
Pulse (Note 1)
IDP
40
A
Drain power dissipation (Tc = 25°C)
PD
80
W
Single pulse avalanche energy
(Note 2)
EAS
360
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.56
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.85 mH, RG = 25 , IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
相關(guān)PDF資料
PDF描述
2SK2841 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK2842 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2855 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
2SK2856 UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
2SK2858 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2841(F) 功能描述:MOSFET N-Ch 400V 10A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2842 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 12A 3PIN TO-220(NIS) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220NIS
2SK2842(Q,T) 功能描述:MOSFET MOSFET N-Ch 500V 12A Rdson 0.52 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2843 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 10A 3PIN TO-220(NIS) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:600V 10A 45W Gds Toshiba Fet Sc-67
2SK2843(Q) 功能描述:MOSFET MOSFET N-Ch 600V 10A Rdson=0.75Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube