參數(shù)資料
型號(hào): 2SK2858
元件分類: 小信號(hào)晶體管
英文描述: 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SSP, SC-70, 3 PIN
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 149K
代理商: 2SK2858
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1996, 2006
MOS FIELD EFFECT TRANSISTOR
2SK2858
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D11706EJ4V0DS00 (4th edition)
Date Published February 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK2858 is a switching device which can be driven directly by a
2.5 V power source.
The 2SK2858 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
Can be driven by a 2.5 V power source
Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2858
SC-70 (SSP)
Marking: G24
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±0.1
A
Drain Current (pulse)
Note
ID(pulse)
±0.4
A
Total Power Dissipation
PT
150
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Note PW
≤ 10
μs, Duty Cycle ≤ 1%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
2.1
±0.1
1.25
±0.1
2.0
±
0.2
0.9
±
0.1
3
Marking
2
1
0.3
+
0.1 0
0.15
+
0.1 0
0.3
0.65
0to
0.1
0.3
0.65
+
0.1 0
1. Source
2. Gate
3. Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
<R>
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SK2864-TL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 200V 20A ZP
2SK2865(Q) 制造商:Toshiba 功能描述:Nch 600V 2A 5@10V PW-Mold Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) New PW-Mold