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參數資料
| 型號： | 2SK2866 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, SC-46, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 413K |
| 代理商： | 2SK2866 |
2SK2866
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2866
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.54 (typ.)
High forward transfer admittance
: |Yfs| = 9.0 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 600 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
600
V
Draingate voltage (RGS = 20 k)
VDGR
600
V
Gatesource voltage
VGSS
±30
V
DC (Note 1)
ID
10
A
Drain current
Pulse (Note 1)
IDP
40
A
Drain power dissipation (Tc = 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
363
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.0
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 , IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 1.9 g (typ.)
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| 2SK2869L | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2869S-E | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2884(2-10S1B) | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2884(2-10S2B) | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2884(TO-220FL) | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2866(F) | 功能描述:MOSFET MOSFET N-Ch 600V 10A Rdson=0.75Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2869L-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) DPAK(L)-(2) Box Bulk 制造商:Renesas Electronics Corporation 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,20A,33m ohm,DPAK-L |
| 2SK2869S(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2869S-E | 制造商:Renesas Electronics Corporation 功能描述:Bulk |
| 2SK2872 | 制造商:Distributed By MCM 功能描述:450V 8A 30W Gds Fuji Fet TO-220Fis N-Ch |
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