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參數(shù)資料
| 型號： | 2SK2838(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10S1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 413K |
| 代理商： | 2SK2838(2-10S1B) |
2SK2838
2002-07-31
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2838
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.84 (typ.)
High forward transfer admittance
: |Yfs| = 4.4 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 400 V)
Enhancementmode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
3.125
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.0 mH, RG = 25 , IAR = 5.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
400
V
Draingate voltage (RGS = 20 k)
VDGR
400
V
Gatesource voltage
VGSS
±30
V
DC (Note 1)
ID
5.5
A
Drain current
Pulse (Note 1)
IDP
22
A
Drain power dissipation (Tc = 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
223
mJ
Avalanche current
IAR
5.5
A
Repetitive avalanche energy (Note 3)
EAR
4.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
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PDF描述 |
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| 2SK2839 | 10 A, 30 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2841 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2841 | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2842 | 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2838-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2841 | 功能描述:MOSFET N-Ch 400V 10A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2841(F) | 功能描述:MOSFET N-Ch 400V 10A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2842 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 12A 3PIN TO-220(NIS) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220NIS |
| 2SK2842(Q,T) | 功能描述:MOSFET MOSFET N-Ch 500V 12A Rdson 0.52 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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