參數(shù)資料
型號(hào): 2SK2826-ZJ
廠商: NEC Corp.
元件分類(lèi): MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 74K
代理商: 2SK2826-ZJ
Data Sheet D11273EJ2V0DS00
3
2SK2826
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature -
C
d
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
C
P
T
0
20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
40
60
80
100
120
140
160
140
120
100
80
60
40
20
1
0.1
10
100
1000
1
10
100
T
C
= 25
C
Single Pulse
0
0.4
0.6
0.8
40
10
100
1000
Pulsed
100
80
60
0.2
0
Pulsed
2
V
GS
=10 V
4
T
A
= -25
C
25
C
75
C
125
C
6
8
Powe DsspaionLmted
DC
I
D(DC)
10ms
I
D(pulse)
V
DS
= 10 V
20
R
( Lmted
1ms
V
GS
= 4.0 V
PW=10
μ
s
100
μ
s
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