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參數(shù)資料
| 型號： | 2SK2857 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管高速開關(guān) |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2SK2857 |
1998,1999
MOS FIELD EFFECT TRANSISTOR
2SK2857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
Document No. D11648EJ2V0DS00 (
2nd
edition)
Date Published
March
1999 NS CP (K)
Printed in Japan
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
PACKAGE DRAWING (Unit : mm)
1
2
3
4.5±0.1
1.6±0.2
0
.
2
4
0.42
±0.06
±0.06
1.5
3.0
1.5±0.1
0.41
-0.05
0.47
DESCRIPTION
The 2SK2857 is a switching device which can be driven directly
by a 5V power source.
The 2SK2857 features a low on-state resistance and excellent
Switching Characteristics, and is suitable for applications such as
actuator driver.
FEATURES
Can be driven by a 5V power source.
Low On-state resistance :
R
DS(on)1
= 220 m
MAX. (V
GS
= 4 V, I
D
= 1.5 A)
R
DS(on)2
= 150 m
MAX. (V
GS
= 10 V, I
D
= 2.5 A)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage
V
DSS
60
V
Gate to Source Voltage
V
GSS
±20
V
Drain Current (DC)
Drain Current (pulse)
Note1
Total Power Dissipation
Note2
I
D(DC)
±4
A
I
D(pulse)
±16
A
P
T
2
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Notes1.
PW
≤
10
μ
s, Duty Cycle
≤
1 %
2.
Mounted on ceramic board of 16 cm
2
×
0.7 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Internal
Diode
Gate
Protection
Diode
Gate
Drain
Electrode
Connection
1.Souce
2.Drain
3.Gate
The mark
shows major revised points.
Marking : NX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2858 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK2859 | Ultrahigh-Speed Switching Applications |
| 2SK2864 | Ultrahigh-Speed Switching Applications |
| 2SK2869 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2885 | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2857-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2857-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2857-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2858-T1(A) | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 5 SC70 Tape & Reel |
| 2SK2862 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 3A 3PIN TO-220(NIS) - Rail/Tube |
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