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參數(shù)資料
| 型號： | 2SK2826-S |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 74K |
| 代理商： | 2SK2826-S |
Data Sheet D11273EJ2V0DS00
2
2SK2826
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 35 A
5.5
6.5
m
R
DS(on)2
V
GS
= 4.0 V, I
D
= 35 A
7.0
9.7
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 35 A
20
94
S
Drain Leakage Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
±10
μ
A
Input Capacitance
C
iss
V
DS
= 10 V
7200
pF
Output Capacitance
C
oss
V
GS
= 0 V
2000
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
700
pF
Turn-on Delay Time
t
d(on)
I
D
= 35 A
100
ns
Rise Time
t
r
V
GS(on)
= 10 V
1200
ns
Turn-off Delay Time
t
d(off)
V
DD
= 30 V
440
ns
Fall Time
t
f
R
G
= 10
520
ns
Total Gate Charge
Q
G
I
D
= 70 A
150
nC
Gate to Source Charge
Q
GS
V
DD
= 48 V
20
nC
Gate to Drain Charge
Q
GD
V
GS
= 10 V
40
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 70 A, V
GS
= 0 V
0.97
V
Reverse Recovery Time
t
rr
I
F
= 70 A, V
GS
= 0 V
80
ns
Reverse Recovery Charge
Q
rr
di/dt = 100A/
μ
s
250
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20V
→
0
V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
R
G
= 10
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
t = 1
μ
s
Duty Cycle
≤
1 %
t
GS
Wave Form
D
Wave Form
V
GS
I
D
10
%
0
0
90
%
90
%
90
%
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10
%
10
%
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