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參數(shù)資料
| 型號： | 2SK2826-S |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 2SK2826-S |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D11273EJ2V0DS00 (2nd edition)
April 1999 NS CP(K)
The mark
shows major revised points.
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super Low On-State Resistance
R
DS(on)1
= 6.5 m
(MAX.) (V
GS
= 10 V, I
D
= 35 A)
R
DS(on)2
= 9.7 m
(MAX.) (V
GS
= 4.0 V, I
D
= 35 A)
Low C
iss
: C
iss
= 7200 pF (TYP.)
Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(AC)
±20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(DC)
+20, –10
V
Drain Current (DC)
Drain Current (Pulse)
Note1
I
D(DC)
±70
A
I
D(pulse)
±280
A
Total Power Dissipation (T
C
= 25°C)
P
T
100
W
Total Power Dissipation (T
A
= 25°C)
P
T
1.5
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to + 150
°C
I
AS
70
A
E
AS
490
mJ
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1 %
2.
Starting Tch = 25 °C, R
A
= 25
,
V
GS
= 20 V
→
0 V
THERMAL RESISTANCE
Channel to Case
R
th
(ch-C)
1.25
°C/W
Channel to Ambient
R
th
(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2826
TO-220AB
2SK2826-S
TO-262
2SK2826-ZJ
TO-263
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