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參數(shù)資料
| 型號： | 2SK2825 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | 2-2H1B, SSM, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 286K |
| 代理商： | 2SK2825 |
2SK2825
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2825
For Portable Equipment
High Speed Switch Applications
Analog Switch Applications
High input impedance
1.5 V gate drive
Low gate threshold voltage: Vth = 0.5~1.0 V
Small package
Marking
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
10
V
DC drain current
ID
100
mA
Drain power dissipation
PD
100
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2H1B
Weight: 2.4 mg (typ.)
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|---|---|
| 2SK2825(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 20V 0.1A 3-Pin SSM T/R |
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