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參數(shù)資料
| 型號： | 2SK2699 |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 419K |
| 代理商： | 2SK2699 |
2SK2699
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 600 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 6 A
—
0.5
0.65
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 6 A
6.0
11.0
—
S
Input capacitance
Ciss
—
2600
—
Reverse transfer capacitance
Crss
—
270
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
820
—
pF
Rise time
tr
—
45
—
Turnon time
ton
—
75
—
Fall time
tf
—
65
—
Switching time
Turnoff time
toff
—
270
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
58
—
Gatesource charge
Qgs
—
37
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 480 V, VGS = 10 V, ID = 12 A
—
21
—
nC
SourceDrain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
12
A
Pulse drain reverse current
(Note 1)
IDRP
—
48
A
Forward voltage (diode)
VDSF
IDR = 12 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
460
—
ns
Reverse recovery charge
Qrr
IDR = 12 A, VGS = 0 V
dIDR / dt = 100 A / μs
—
4.8
—
μC
Marking
K2699
TOSHIBA
Lot No.
Note 4
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2699(F) | 制造商:Toshiba 功能描述:Nch 600V 12A 0.65@10V TO3P(N) Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-3PN |
| 2SK2699(F,T) | 功能描述:兩極晶體管 - BJT N-Ch FET RDS 0.5 Ohm IDSS 100uA VDS 600V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SK2700(Q,T) | 功能描述:MOSFET N-ch 900V 3A 3.7 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2701A | 制造商:Sanken Electric Co Ltd 功能描述:Trans MOSFET N-CH 450V 28A 3-Pin(3+Tab) TO-220F Bulk 制造商:Sanken Electric Co Ltd 功能描述:MOSFET N-CH 450V TO-220F |
| 2SK2713 | 功能描述:MOSFET N-CH 450V 5A TO-220FN RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設(shè)備封裝:TO-220FP 包裝:管件 |
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