參數(shù)資料
型號(hào)： 2SK2718
元件分類： JFETs
英文描述： 2.5 A, 900 V, 6.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, 2-10R1B, SC-67, 3 PIN
文件頁數(shù)： 1/4頁
文件大小： 412K
代理商： 2SK2718
2SK2718
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSIII)
2SK2718
DCDC Converter and Motor Drive Applications
Low drainsource ON resistance
: RDS (ON) = 5.6 (typ.)
High forward transfer admittance
: |Yfs| = 2.0 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 720 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
900
V
Draingate voltage (RGS = 20 k)
VDGR
900
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
2.5
A
Drain current
Pulse (Note 1)
IDP
7.5
A
Drain power dissipation (Tc = 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
216
mJ
Avalanche current
IAR
2.5
A
Repetitive avalanche energy (Note 3)
EAR
4.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
3.125
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 63.4 mH, RG = 25 , IAR = 2.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2718(Q) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 2.5A 3-Pin (3+Tab) TO-220(NIS) Bulk
2SK2719 功能描述:MOSFET N-CH 900V 3A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK2719(F) 制造商:Toshiba 功能描述:Nch 900V 3A 4.3@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 3A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 900V 3A 125W TO-3P(N)
2SK2723-AZ 制造商:Renesas Electronics 功能描述:Nch 60V 25A 40m@10V IsolatedTO220 Bulk 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220 Isolated Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220 Isolated
2SK2724-AZ 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA
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