參數(shù)資料
型號： 2SK2718
元件分類： JFETs
英文描述： 2.5 A, 900 V, 6.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, 2-10R1B, SC-67, 3 PIN
文件頁數(shù)： 2/4頁
文件大?。?/td> 412K
代理商： 2SK2718
2SK2718
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
―
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
―
V
Drain cutoff current
IDSS
VDS = 720 V, VGS = 0 V
―
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
900
―
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
―
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 1.5 A
―
5.6
6.4
Forward transfer admittance
|Yfs|
VDS = 20 V, ID = 1.5 A
1.0
2.0
―
S
Input capacitance
Ciss
―
510
―
Reverse transfer capacitance
Crss
―
10
―
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
―
55
―
pF
Rise time
tr
―
20
―
Turnon time
ton
―
60
―
Fall time
tf
―
40
―
Switching time
Turnoff time
toff
―
115
―
ns
Total gate charge (gatesource
plus gatedrain)
Qg
―
21
―
Gatesource charge
Qgs
―
11
―
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 2.5 A
―
10
―
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
―
2.5
A
Pulse drain reverse current
(Note 1)
IDRP
―
7.5
A
Forward voltage (diode)
VDSF
IDR = 2.5 A, VGS = 0 V
―
2.0
V
Reverse recovery time
trr
―
960
―
ns
Reverse recovery charge
Qrr
IDR = 2.5 A, VGS = 0 V
dIDR / dt = 100 A / s
―
5.3
―
C
Marking
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2718
Part No. (or abbreviation code)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2718(Q) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 2.5A 3-Pin (3+Tab) TO-220(NIS) Bulk
2SK2719 功能描述:MOSFET N-CH 900V 3A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK2719(F) 制造商:Toshiba 功能描述:Nch 900V 3A 4.3@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 3A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-ch 900V 3A 125W TO-3P(N)
2SK2723-AZ 制造商:Renesas Electronics 功能描述:Nch 60V 25A 40m@10V IsolatedTO220 Bulk 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220 Isolated Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220 Isolated
2SK2724-AZ 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA
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