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參數(shù)資料
| 型號： | 2SK2684L-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大小： | 104K |
| 代理商： | 2SK2684L-E |
2SK2684(L), 2SK2684(S)
Rev.2.00 Sep 20, 2005 page 4 of 7
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(m
)
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Switching Characteristics
Switching
Time
t
(ns)
Drain Current ID (A)
100
80
60
40
20
–40
0
40
80
120
160
0
0.1
0.3
1
3
10
30
100
30
3
10
0.3
1
0.1
ID = 20 A
VGS = 4 V
10 V
5, 10 A
5, 10, 20 A
25
°C
Tc = –25
°C
75
°C
Pulse Test
VDS = 10 V
Pulse Test
0.1
0.3
1
3
10
30
100
010
20
30
40
50
10000
2000
5000
1000
100
200
500
50
40
30
20
10
0
20
16
12
8
4
8
1624
3240
0
1000
300
30
100
3
10
1
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
VDD = 5 V
10 V
25 V
ID = 30 A
VGS
VDS
VDD = 25 V
10 V
5 V
1000
300
30
100
3
10
1
0.1
0.3
1
3
10
30
100
VGS = 10 V, VDD = 10 V
PW = 5
s, duty < 1 %
tf
tr
td(on)
td(off)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2687-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5 Milliohms;ID +/-50A;TO-220;PD 60W;VGS +/ |
| 2SK2689-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK2690-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.5 Milliohms;ID +/-80A;TO-3P;PD 125W;VGS +/ |
| 2SK2690-01SC-P | 制造商:Fuji Electric 功能描述: |
| 2SK2691-01RSC | 制造商:Fuji Electric 功能描述: |
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