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參數(shù)資料
| 型號： | 2SK2684L-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 104K |
| 代理商： | 2SK2684L-E |
2SK2684(L), 2SK2684(S)
Rev.2.00 Sep 20, 2005 page 3 of 7
Main Characteristics
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Case Temperature TC (°C)
Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Drain
Current
I
D
(A)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(m
)
100
75
50
25
0
50
100
150
200
500
200
100
20
50
10
2
5
1
0.5
0.1
0.3
1
3
10
30
100
50
40
30
20
10
0
2
468
10
50
40
30
20
10
0
24
68
10
3.5 V
4 V
5 V
10 V
VGS = 3 V
6 V
4.5 V
Tc = 75
°C
25
°C
–25
°C
Ta = 25
°C
100
s
1 ms
PW
=
10
ms
(1shot)
DC
Operation
(Tc
=
25
°C)
10
s
Operation in
this area is
limited by RDS(on)
Pulse Test
VDS = 10 V
Pulse Test
1.0
0.8
0.6
0.4
0.2
0
48
12
16
20
1
10
100
250
500
200
100
20
50
10
5
ID = 20 A
5 A
10 A
20
5
VGS = 4 V
10 V
Pulse Test
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| 2SK2687-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5 Milliohms;ID +/-50A;TO-220;PD 60W;VGS +/ |
| 2SK2689-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK2690-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.5 Milliohms;ID +/-80A;TO-3P;PD 125W;VGS +/ |
| 2SK2690-01SC-P | 制造商:Fuji Electric 功能描述: |
| 2SK2691-01RSC | 制造商:Fuji Electric 功能描述: |
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