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參數(shù)資料
| 型號： | 2SK2409-AZ |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 2SK2409-AZ |
2SK2409
2
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-State Resistance
RDS(on)1
22
27
VGS = 10 V, ID = 20 A
Drain to Source On-State Resistance
RDS(on)2
30
40
VGS = 4 V, ID = 20 A
Gate to Source Cutoff Voltage
VGS(off)
1.0
1.5
2.0
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
20
35
VDS = 10 V, ID = 20 A
Drain Cutoff Current
IDSS
10
VDS = 60 V, VGS = 0
Gate to Source Leakage Current
IGSS
±10
VGS =
±20 V, VDS = 0
Input Capacitance
Ciss
2040
VDS = 10 V
Output Capacitance
Coss
1080
VGS = 0
Reverse Transfer Capacitance
Crss
300
f = 1 MHz
Turn-On Delay Time
td(on)
30
ID = 20 A
Rise Time
tr
350
VGS(on) = 10 V
Turn-Off Delay Time
td(off)
210
VDD = 30 V
Fall Time
tf
260
RG = 10
Total Gate Charge
QG
72
ID = 40 A
Gate to Source Charge
QGS
6.0
VDD = 48 V
Gate to Drain Charge
QGD
24
VGS = 10 V
Body Diode Forward Voltage
VF(S-D)
1.1
IF = 40 A, VGS = 0
Reverse Recovery Time
trr
110
IF = 40 A, VGS = 0
Reverse Recovery Charge
Qrr
360
di/dt = 100 A/
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
50
RG = 25
DUT
L
VDD
IAS
ID
VDD
Starting Tch
VDS
BVDSS
VGS
0
t
t = 1 s
Duty Cycle
≤ 1%
VGS = 20
0 V
→
PG
RG = 10
DUT
RL
VDD
PG.
VGS
Wave
Form
ID
Wave
Form
VGS(on)
10 %
0
VGS
ID
10 %
0
90 %
10 %
90 %
td (on)
tr
ton
td (off)
tf
toff
90 %
RG
Test Circuit 3 Gate Charge
50
DUT
RL
VDD
PG.
IG = 2 mA
UNIT
m
m
V
S
A
pF
ns
nC
V
ns
nC
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