參數(shù)資料
型號: 2SK2409-AZ
元件分類: JFETs
英文描述: 40 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: MP-45F, ISOLATED TO-220, 3 PIN
文件頁數(shù): 1/8頁
文件大小: 114K
代理商: 2SK2409-AZ
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2409 is N-Channel MOS Field Effect Transistor de-
signed for solenoid, motor, and lamp driver.
FEATURES
Low On-Resistance
RDS(on)
≤ 27 m (VGS = 10 V, ID = 20 A)
RDS(on)
≤ 40 m (VGS = 4 V, ID = 20 A)
Low Ciss
Ciss = 2040 pF TYP.
Built-in Gate Protection Diode
QUALITY GRADE
Standard
Please refer to “Quality grade on NEC Semiconductor Device”
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±40
A
Drain Current (pulse)
ID(pulse)
*
±160
A
Total Power Dissipation (Ta = 25 C)
PT1
2.0
W
Total Power Dissipation (Tc = 25 C)
PT2
35
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150
C
Single Avalanche Current
IAS**
40
A
Single Avalanche Energy
EAS
**
160
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
Document No. TC-2489
(O. D. No. TC-8028)
Date Published September 1994 P
Printed in Japan
2SK2409
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DIMENSION
(in millimeters)
0.7 ±0.1
1.3 ±0.2
2.54
1.5 ±0.2
4
±0.2
13.5
MIN.
15.0
±0.3
3
±0.1
12.0
±0.2
10.0 ±0.3
3.2 ±0.2
123
1.
2.
3.
Gate
Drain
Source
4.5 ±0.2
2.7 ±0.2
0.65 ±0.1
2.5 ±0.1
MP-45F (ISOLATED TO-220)
Drain
Body
Diode
Gate
Gate Protection
Diode
Source
1994
DATA SHEET
The information in this document is subject to change without notice.
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