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參數(shù)資料
| 型號(hào)： | 2SK241 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | 2-4E1D, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 205K |
| 代理商： | 2SK241 |
2SK241
2003-03-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK241
FM Tuner, VHF and RF Amplifier Applications
Low reverse transfer capacitance: Crss = 0.035 pF (typ.)
Low noise figure: NF = 1.7dB (typ.)
High power gain: GPS = 28dB (typ.)
Recommend operation voltage: 5~15 V
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGS
±5
V
Drain current
ID
30
mA
Drain power dissipation
PD
200
mW
Channel temperature
Tch
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0, VGS = ±5 V
±50
nA
Drain-source voltage
VDSX
VGS = -4 V, ID = 100 mA
20
V
Drain current
IDSS
VDS = 10 V, VGS = 0
(Note)
1.5
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 100 mA
-2.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
10
mS
Input capacitance
Ciss
3.0
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
0.035
0.050
pF
Power gain
Gps
28
dB
Noise figure
NF
VDS = 10 V, VGS = 0,
f
= 100 MHz (Figure 1)
1.7
3.0
dB
Note: IDSS classification O: 1.5~3.5, Y: 3.0~7.0, GR: 6.0~14.0
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1D
Weight: 0.13 g (typ.)
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| 2SK2410 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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