參數(shù)資料
型號: 2SK2220-E
元件分類: JFETs
英文描述: 8 A, N-CHANNEL, Si, POWER, MOSFET
封裝: SC-65, TO-3P, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 72K
代理商: 2SK2220-E
2SK2220, 2SK2221
Rev.2.00 Sep 07, 2005 page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
2SK2220
180
Drain to source voltage
2SK2221
VDSX
200
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
8
A
Body to drain diode reverse drain current
IDR
8
A
Channel dissipation
Pch*
1
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK2220
180
Drain to source
breakdown voltage
2SK2221
V(BR)DSX
200
V
ID = 10 mA, VGS = –10 V
Gate to source breakdown voltage
V(BR)GSS
±20
V
IG =
±100 A, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.15
1.45
V
ID = 100 mA, VDS = 10 V
Drain to source saturation voltage
VDS(sat)
12
V
ID = 8 A, VGD = 0 V*
2
Forward transfer admittance
|yfs|
0.7
1.0
1.4
S
ID = 3 A, VDS = 10 V*
2
Input capacitance
Ciss
600
pF
Output capacitance
Coss
800
pF
Reverse transfer capacitance
Crss
8
pF
VGS = –5 V, VDS = 10 V,
f = 1 MHz
Turn-on time
ton
250
ns
Turn-off time
toff
90
ns
VDD = 30 V, ID = 4 A
Note:
2. Pulse Test
相關(guān)PDF資料
PDF描述
2SK2221-E 8 A, N-CHANNEL, Si, POWER, MOSFET
2SK2221 POWER, FET
2SK2229 5 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2229 5 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2230 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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