參數(shù)資料
型號: 2SK2229
元件分類: JFETs
英文描述: 5 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-8M1B, 3 PIN
文件頁數(shù): 1/5頁
文件大小: 389K
代理商: 2SK2229
2SK2229
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK2229
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 0.12 (typ.)
High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation
PD
1.3
W
Single pulse avalanche energy
(Note 2)
EAS
129
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
0.13
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (cha)
96.1
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 7 mH, RG = 25 , IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8M1B
Weight: 0.54 g (typ.)
相關PDF資料
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2SK2230 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
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