參數(shù)資料
型號: 2SK2229
元件分類: JFETs
英文描述: 5 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-8M1B, 3 PIN
文件頁數(shù): 2/5頁
文件大小: 389K
代理商: 2SK2229
2SK2229
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
100
μA
Drainsource breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
2.0
V
VGS = 4 V, ID = 1.3 A
0.20
0.30
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
0.12
0.16
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
3.0
5.0
S
Input capacitance
Ciss
370
Reverse transfer capacitance
Crss
60
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
180
pF
Rise time
tr
18
Turnon time
ton
25
Fall time
tf
55
Switching time
Turnoff time
toff
170
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
12
Gatesource charge
Qgs
8
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 5 A
4
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
5
A
Pulse drain reverse current
(Note 1)
IDRP
20
A
Forward voltage (diode)
VDSF
IDR = 5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
70
ns
Reverse recovered charge
Qrr
IDR = 5 A, VGS = 0 V, dIDR/dt = 50 A/μs
0.1
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
K2229
Lot No.
Note 4
Part No. (or abbreviation code)
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2SK2230 2 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
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