參數(shù)資料
型號(hào): 2SK2158
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: N溝道場(chǎng)效應(yīng)晶體管的高速開關(guān)
文件頁數(shù): 1/6頁
文件大小: 60K
代理商: 2SK2158
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2158
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
Document No. D11234EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
The 2SK2158 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2158 is suitable for use in low-voltage
portable systems such as headphone stereo sets and camcorders.
FEATURES
Capable of drive gate with 1.5 V
Because of high input impedance, there is no need to
consider driving current.
Bias resistance can be omitted, enabling reduction in total
number of parts.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATINGS
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
50
V
Gate to Source Voltage
V
GSS
V
DS
= 0
±
7.0
V
Drain Current (DC)
I
D(DC)
±
0.1
A
Drain Current (pulse)
I
D(pulse)
PW
10 ms,
Duty Cycle
50 %
±
0.2
A
Total Power Dissipation
P
T
200
mW
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
–55 to +150
C
2.8
±
0.2
1.5
3
2
0
1
Marking
Marking: G23
3
1
2
Gate protection
diode
Internal
diode
EQUIVALENT CIRCUIT
0.65
+0.1
0
+
0
+
0
+
0
2
±
0
0
1
PIN CONNECTION
1. Source (S)
2. Gate (G)
3. Drain (D)
PACKAGE DIMENSIONS
(in millimeters)
相關(guān)PDF資料
PDF描述
2SK2159 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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2SK2170 N-Channel Junction Silicon FET for Impedance Converter Applications(阻抗轉(zhuǎn)換器應(yīng)用的N溝道結(jié)型硅場(chǎng)效應(yīng)管)
2SK2171 N-Channel Junction Silicon FET for High-Frequency, Low-Frequency Amplifier Analog Switch Applications(應(yīng)用于高頻,低頻放大器模擬開關(guān)的N溝道結(jié)型場(chǎng)效應(yīng)管)
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