參數(shù)資料
型號: 2SK2159
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: N溝道場效應(yīng)晶體管的高速開關(guān)
文件頁數(shù): 1/6頁
文件大小: 62K
代理商: 2SK2159
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2159
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
Document No. D11235EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
The 2SK2159 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2159 is suitable for driving actuators of
low-voltage portable systems such as headphone stereo sets
and camcorders.
FEATURES
Capable of drive gate with 1.5 V
Small R
DS(on)
R
DS(on)
= 0.7
MAX. @V
GS
= 1.5 V, I
D
= 0.1 A
R
DS(on)
= 0.3
MAX. @V
GS
= 4.0 V, I
D
= 1.0 A
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATINGS
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
60
V
Gate to Source Voltage
V
GSS
V
DS
= 0
±
14
V
Drain Current (DC)
I
D(DC)
±
2.0
A
Drain Current (pulse)
I
D(pulse)
PW
10 ms,
Duty Cycle
50 %
±
4.0
A
Total Power Dissipation
P
T
Mounted on 16 cm
2
×
0.7 mm ceramic substrate.
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
–55 to +150
C
4.5
±
0.1
1.6
±
0.2
1
2
3
2
±
0.42
±
0.06
±
3.0
1.5
0.47
±
0.06
0
0.42
±
0.06
1.5
±
0.1
0.41
–0.05
2
3
Gate protection
diode
Internal diode
1
PACKAGE DIMENSIONS
(in millimeters)
EQUIVALENT CIRCUIT
PIN CONNECTION
1. Source (S)
2. Drain (D)
3. Gate (G)
Marking: NW
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