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參數(shù)資料
| 型號(hào)： | 2SK2157 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 中文描述： | N溝道場效應(yīng)晶體管的高速開關(guān) |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 60K |
| 代理商： | 2SK2157 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2157
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
5.7 ±0.1
2.0 ±0.2
S
G
1.5 ±0.1
0.41 ±0.05
4.2
0.85 ±0.1
2.1
0.5 ±0.1
1
0.5 ±0.1
3
5
D
0
EQUIVALENT CIRCUIT
Source (S)
Internal diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NA4
The 2SK2157 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V. This product has a low ON resistance and
superb switching characteristics and is ideal for driving the actua-
tors and DC/DC converters.
FEATURES
New package intermediate between small-signal and power
models
Can be directly driven by output of 5-V IC
Low ON resistance
R
DS(on)
≤
0.15
@V
GS
= 4 V, I
D
= 2.5 A
R
DS(on)
≤
0.10
@V
GS
= 10 V, I
D
= 2.5 A
Document No. D11233EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
30
V
Gate to Source Voltage
V
GSS
V
DS
= 0
±
20
V
Drain Current (DC)
I
D(DC)
±
5.0
A
Drain Current (Pulse)
I
D(pulse)
PW
≤
10 ms,
Duty cycle
≤
50 %
±
10.0
A
Total Power Dissipation
P
T
7.5 cm
2
×
0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
–55 to +150
C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK2158 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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| 2SK2158-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,50V,0.1A,32ohm,MINI MOLD 制造商:Renesas 功能描述:Trans MOSFET N-CH 50V 0.1A 3-Pin SC-59 T/R |
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