參數(shù)資料
型號: 2SK2144
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 2/6頁
文件大小: 29K
代理商: 2SK2144
2SK2144
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
600
V
Gate to source voltage
±
30
V
Drain current
3
A
Drain peak current
6
A
Body to drain diode reverse drain current
3
A
Channel dissipation
25
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes
1. PW
10
μ
s, duty cycle
1 %
2. Value at Tc = 25
°
C
Tstg
–55 to +150
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