參數(shù)資料
型號(hào): 2SK2141
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 99K
代理商: 2SK2141
2SK2141
3
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
20
140
160
100
T
C
- Case Temperature - °C
d
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
FORWARD BIAS SAFE OPERATING AREA
10
100
1 000
100
V
DS
- Drain to Source Voltage - V
I
D
4
16
8
12
2
80
0
40
1.0
10
0.1
60
20
60
40
80
100
120
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
20
140
160
T
C
- Case Temperature - °C
P
T
80
0
40
60
20
60
40
80
100
120
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
5
10
100
V
GS
- Gate to Source Voltage - V
I
D
5.0
10
1.0
6
12
8
4
0
Pulsed
1.0
T
C
= 25 °C
Single Pulse
R
DS(on
Lmted
(a V
GS
=20V
0
100 s
1ms
Powe DsspaionLmted
I
D (pulse)
200ms
10
20
12 V
10 V
8 V
V
GS
= 6 V
50
V
DS
= 10 V
Pulsed
T
ch
= 125 °C
75 °C
25 °C
–25 °C
I
D (DC)
μ
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