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參數(shù)資料
| 型號： | 2SK2141 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 2SK2141 |
2SK2141
2
Test Circuit 1: Avalanche Capability
Test Circuit 2: Switching Time
Test Circuit 3: Gate Charge
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source On-state Resistance
R
DS(on)
0.8
1.1
V
GS
= 10 V, I
D
= 3.0 A
Gate to Source Cutoff Voltage
V
GS(off)
2.5
3.5
V
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
y
fs
2.0
S
V
DS
= 10 V, I
D
= 3.0 A
Drain Leakage Current
I
DSS
100
μ
A
V
DS
= 600V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
±
100
nA
V
GS
=
±
30 V, V
DS
= 0
Input Capacitance
C
iss
1150
pF
V
DS
= 10 V
Output Capacitance
C
oss
260
pF
V
GS
= 0
Reverse Transfer Capacitance
C
rss
60
pF
f = 1 MHz
Turn-On Delay Time
t
d(on)
15
ns
V
GS
= 10 V
Rise Time
t
r
15
ns
V
DD
= 150 V
Turn-Off Delay Time
t
d(off)
75
ns
I
D
= 3.0 A, R
G
= 10
Fall Time
t
f
13
ns
R
L
= 37.5
Total Gate Charge
Q
G
40
nC
V
GS
= 10 V
Gate to Source Charge
Q
GS
6.0
nC
I
D
= 6.0 A
Gate to Drain Charge
Q
GD
20
nC
V
DD
= 480 V
Diode Forward Voltage
V
F(S-D)
1.0
V
I
F
= 6.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
370
ns
I
F
= 6.0 A
Reverse Recovery Charge
Q
rr
1.5
μ
C
di/dt = 50 A/
μ
s
V
GS
= 20
→
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
PG.
R
G
= 10
D.U.T.
R
L
V
DD
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1 s
Duty Cycle
≤
1%
V
GS
Wave
Form
I
D
Wave
Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d(on)
t
r
t
d (off)
t
f
τ
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