參數(shù)資料
型號(hào): 2SK2109
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: N溝道場(chǎng)效應(yīng)晶體管的高速開(kāi)關(guān)
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 58K
代理商: 2SK2109
2SK2109
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
D
1
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
R
D
1.5
V
GS
- Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
C
i
,
o
,
r
0.1
500
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
t
d
,
r
,
d
,
f
0.5
50
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
S
0.2
1
V
SD
- Source to Drain Voltage - V
0.5
0
0.01
5
200
100
50
20
0.2
2
5
20
100
20
10
5
1
0.1
0.2
1
5
0.1
0.001
0.0001
0.4
0.7
0.01
0.3
0.5
0.6
0.8
0.9
1
V
GS
= 0
f = 1 MHz
C
rss
10
5
0.5
1
10
50
C
oss
C
iss
0.1
1
10
T
A
= 75 C
25 C
–25 C
1
0.5
0
10
15
20
V
GS
= 10 V
I
D
= 0.3 A
2
0.5
2
t
d(off)
t
f
t
r
t
d(on)
V
DD
= 25 V
V
GS(on)
= 10 V
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