參數(shù)資料
型號(hào): 2SK2109
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: N溝道場(chǎng)效應(yīng)晶體管的高速開關(guān)
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 58K
代理商: 2SK2109
2SK2109
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
d
T
30
T
A
- Ambient Temperature - C
100
FORWARD BIAS SAFE OPERATING AREA
I
D
0
10
V
DS
- Drain to Source Voltage - V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
I
D
0
1.0
V
DS
- Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
I
D
0.5
1
V
GS
- Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|
y
f
|
0.001
10
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
R
D
0.01
1
I
D
- Drain Current - A
80
60
40
20
0
60
90
120
150
5
2
1
0.5
0.2
0.1
2
5
10
20
50
100
Single pulse
1ms
DC
PW=100ms
10ms
0.8
0.6
0.4
0.2
0.4
0.8
1.2
1.6
2.0
10 V
10 V
3.0 V
4.5 V
4.0 V
3.5 V
2.5 V
V
GS
= 2.0 V
0.1
0.01
0.001
0.0001
1
1.5
2
2.5
3
V
DS
= 10 V
1
0.1
0.01
0.01
0.1
1
0.5
0
0.1
1
10
V
GS
= 4 V
T
A
= 75 C
25 C
–25 C
25 C
75 C
T
A
= –25 C
V
DS
= 10 V
T
A
= 75 C
25 C
–25 C
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