參數(shù)資料
型號(hào): 2SK2111
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: N溝道場效應(yīng)晶體管的高速開關(guān)
文件頁數(shù): 1/6頁
文件大?。?/td> 58K
代理商: 2SK2111
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2111
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
1.5 ± 0.1
0.41
+0.03
0
0.42
±0.061.5
3.0
0.47
0.42
±0.06
2
4
4.5 ± 0.1
1.6 ± 0.2
S
D
G
EQUIVALENT CIRCUIT
Source (S)
Internal diode
Gate protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NU
The 2SK2111 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators, such as
motors and DC/DC converters.
FEATURES
Low ON resistance
R
DS(on)
= 0.6
MAX. @V
GS
= 4.0 V, I
D
= 0.5 A
High switching speed
t
on
+ t
off
< 100 ns
Low parasitic capacitance
Document No. D11231EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
60
V
Gate to Source Voltage
V
GSS
V
DS
= 0
±
20
V
Drain Current (DC)
I
D(DC)
±
1.0
A
Drain Current (Pulse)
I
D(pulse)
PW
10 ms,
Duty cycle
50 %
±
2.0
A
Total Power Dissipation
P
T
16 cm
2
×
0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
–55 to +150
C
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