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參數(shù)資料
| 型號(hào)： | 2SK2055 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 中文描述： | N溝道場(chǎng)效應(yīng)晶體管的高速開關(guān) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | 2SK2055 |
1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2055
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
PACKAGE DIMENSIONS (in mm)
2.0 ±0.2
5.7 ±0.1
3
1
0.5 ±0.1
0
2.1
4.2
0.5 ±0.1
0.85
±0.1
S
D
G
5
1.5 ±0.1
0.4 ±0.05
Marking: NA3
EQUIVALENT CIRCUIT
Source (S)
Internal
diode
Gate
protection
diode
Gate (G)
Drain (D)
PIN CONNECTIONS
S:
D:
G:
Gate
Source
Drain
The 2SK2055 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
FEATURES
New package intermediate between small-signal and power
models
Can be directly driven by output of 5-V IC
Low ON resistance
R
DS(on)
= 0.45
MAX. @V
GS
= 4 V, I
D
= 1.0 A
R
DS(on)
= 0.35
MAX. @V
GS
= 10 V, I
D
= 1.0 A
Document No. D11226EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
V
DSS
V
GS
= 0
100
V
Gate to Source Voltage
V
GSS
V
DS
= 0
±
20
V
Drain Current (DC)
I
D(DC)
±
2.0
A
Drain Current (Pulse)
I
D(pulse)
PW
≤
10 ms,
Duty cycle
≤
50 %
±
4.0
A
Total Power Dissipation
P
T
7.5 cm
2
×
0.7 mm, ceramic substrate used
2.0
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
–55 to +150
C
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