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參數(shù)資料
| 型號： | 2SK1950(S) |
| 元件分類： | JFETs |
| 英文描述： | 0.25 ohm, POWER, FET |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 27K |
| 代理商： | 2SK1950(S) |
2SK1950(L), 2SK1950(S)
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
100
AV
DS = 50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
0.5
—
1.5
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.2
0.25
I
D = 2 A
V
GS = 10 V*
1
—
0.3
0.45
I
D = 0.6 A
V
GS = 2.5 V*
1
Forward transfer admittance
|y
fs|
(6)
(10)
—
S
I
D = 2 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
(350)
—
pF
V
DS = 10 V
V
GS = 0
f = 1 MHz
Output capacitance
Coss
—
(200)
—
pF
Reverse transfer capacitance
Crss
—
(80)
—
pF
Turn-on delay time
t
d(on)
—
(10)
—
ns
I
D = 2 A
V
GS = 10 V
R
L = 15
Rise time
t
r
—
(50)
—
ns
Turn-off delay time
t
d(off)
—
(100)
—
ns
Fall time
t
f
—
(60)
—
ns
Body to drain diode forward
voltage
V
DF
—
(1.2)
—
V
I
F = 3 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
(100)
—
ns
I
F = 3 A, VGS = 0,
diF / dt = 50 A /
s
Note
1. Pulse Test
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